hírek
Vishay claims best FOM for 600V superjunction mosfet
Called SiHH068N60E, its on-resistance is 27% down compared with the firm’s previous-generation 600V E Series, and gate charge is 60% lower.
In absolute terms, typical on-resistance is 59mΩ at 10V and gate charge is 53nC.
For improved output efficiency, output capacitances Co(er) and Co(tr) are 94 and 591pF, respectively.
Designed to withstand over-voltage transients, avalanche limits are guaranteed through 100% UIS testing.
It comes in a PowerPAK 8×8 package, that is RoHS-compliant and halogen-free.
Applications are expected in power factor correction and hard-switched dc-dc converter topologies, in telecom, industrial, and enterprise applications.
In absolute terms, typical on-resistance is 59mΩ at 10V and gate charge is 53nC.
For improved output efficiency, output capacitances Co(er) and Co(tr) are 94 and 591pF, respectively.
Designed to withstand over-voltage transients, avalanche limits are guaranteed through 100% UIS testing.
It comes in a PowerPAK 8×8 package, that is RoHS-compliant and halogen-free.
Applications are expected in power factor correction and hard-switched dc-dc converter topologies, in telecom, industrial, and enterprise applications.